Publications

Publications from members of the Solar Power Labs since 2009

J. Oh, G. TamizhMani, and S. Bowden, “Surface Disruption Method With Flexible Glass to Prevent Potential-Induced Degradation of the Shunting Type in PV Modules,” IEEE Journal of Photovoltaics, vol. 7, no. 1, pp. 62–67, Jan. 2017.

J. Oh, B. Dauksher, S. Bowden, G. Tamizhmani, P. Hacke, and J. D’Amico, “Further Studies on the Effect of SiN Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation,” IEEE Journal of Photovoltaics, vol. PP, no. 99, pp. 1–7, 2017.

S. Y. Herasimenka, W. J. Dauksher, M. Boccard, and S. Bowden, “ITO/SiOx:H stacks for silicon heterojunction solar cells,” Solar Energy Materials and Solar Cells, vol. 158, Part 1, pp. 98–101, Dec. 2016.

A. Maros, N. N. Faleev, M. I. Bertoni, C. B. Honsberg, and R. R. King, “Carrier localization effects in GaAs1−xSbx/GaAs heterostructures,” Journal of Applied Physics, vol. 120, no. 18, p. 183104, Nov. 2016.

K.-Y. Ban, Y. Kim, D. Kuciauskas, S. P. Bremner, and C. B. Honsberg, “Investigation of carrier dynamics in InAs/GaAsSb quantum dots with different silicon delta-doping levels,” Semicond. Sci. Technol., vol. 31, no. 12, p. 125010, Nov. 2016.

M. S. Bailly, J. Karas, H. Jain, W. J. Dauksher, and S. Bowden, “Damage-free laser patterning of silicon nitride on textured crystalline silicon using an amorphous silicon etch mask for Ni/Cu plated silicon solar cells,” Thin Solid Films, vol. 612, pp. 243–249, Aug. 2016.

L. Ding, C. Zhang, T. U. Nærland, N. Faleev, C. Honsberg, and M. I. Bertoni, “Silicon Minority-carrier Lifetime Degradation During Molecular Beam Heteroepitaxial III-V Material Growth,” Energy Procedia, vol. 92, pp. 617–623, Aug. 2016.

A. Augusto, K. Tyler, S. Y. Herasimenka, and S. G. Bowden, “Flexible Modules Using <70 μm Thick Silicon Solar Cells,” Energy Procedia, vol. 92, pp. 493–499, Aug. 2016.

Y. Kim, N. N. Faleev, K.-Y. Ban, J. O. Kim, S. J. Lee, and C. B. Honsberg, “Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well,” J. Phys. D: Appl. Phys., vol. 49, no. 30, p. 305102, Jul. 2016.

C. Zhang et al., “Hetero-emitter GaP/Si solar cells with high Si bulk lifetime,” presented at the 43rd IEEE PVSC Conference, 2016.

J. Oh, S. Dahal, B. Dauksher, S. Bowden, G. Tamizhmani, and P. Hacke, “A Novel Technique For Performing Susceptibility Screening During the Dolar Cell Fabrication Process,” in 43rd IEEE PVSC Conference, Portland, 2016.

C. Zhang et al., “Hetero-emitter GaP/Si solar cells with high Si bulk lifetime,” in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, pp. 1950–1953.

J. J. Williams et al., “Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology,” in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, pp. 0193–0195.

E. Vadiee et al., “AlGaSb based solar cells grown on GaAs by Molecular Beam Epitaxy,” in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, pp. 2313–2316.

A. F. Routhier and C. Honsberg, “Thermal energy storage to increase solar photovoltaic penetration,” in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, pp. 1857–1861.

J. Oh, S. Dahal, B. Dauksher, S. Bowden, G. Tamizhmani, and P. Hacke, “A novel technique for performing PID susceptibility screening during the solar cell fabrication process,” in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, pp. 0907–0910.

D. B. Needleman, A. Augusto, A. Peral, S. Bowden, C. del Cañizo, and T. Buonassisi, “Thin absorbers for defect-tolerant solar cell design,” in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, pp. 0606–0610.

P. Muralidharan, S. Bowden, S. M. Goodnick, and D. Vasileska, “Multiscale modeling of silicon heterojunction solar cells,” in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, pp. 3547–3551.

A. Maros, N. Faleev, S. H. Lee, J. S. Kim, C. B. Honsberg, and R. R. King, “1-eV GaNAsSb for multijunction solar cells,” in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, pp. 2306–2309.

P. Luppina, S. Bowden, P. Lugli, and S. M. Goodnick, “Modeling of a gallium phosphide/silicon heterojunction solar cells,” in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, pp. 2467–2472.

S. Kim, S. Bowden, and C. B. Honsberg, “Fabrication of nanopillar structure by silica nanosphere lithography and passivation with wet chemical oxidation cleaning,” in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, pp. 2922–2924.

A. Killam, T. Reblitz, A. Augusto, and S. Bowden, “All silicon tandem solar cell,” in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, pp. 2448–2450.

J. Karas et al., “Addressing adhesion and reliability concerns of copper-plated c-Si solar cells and modules,” in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, pp. 0899–0903.

L. Ding, C. Zhang, T. U. N?rland, N. Faleev, C. Honsberg, and M. I. Bertoni, “On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials,” in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, pp. 2048–2051.

S. N. Dahal, J. A. LeBeau, S. Bowden, and C. Honsberg, “Sub-surface laser damage in sapphire and silicon: A path towards laser wafering,” in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, pp. 0628–0630.

M. Cotton, S. Y. Herasimenka, W. J. Dauksher, E. Howard, M. Strnad, and S. Bowden, “Processing of ultrathin silicon heterojunction solar cells bonded to a glass carrier,” in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, pp. 0643–0644.

A. Augusto, K. Tyler, S. Y. Herasimenka, and S. G. Bowden, “Series connection front-to-front and back-to-back of silicon heterojunction solar cells,” in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, pp. 2631–2634.

A. Aguilar et al., “Development of Cu plating for silicon heterojunction solar cells,” in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, pp. 1972–1975.

Y. Kim, K.-Y. Ban, C. Zhang, J. O. Kim, S. J. Lee, and C. B. Honsberg, “Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer,” Applied Physics Letters, vol. 108, no. 10, p. 103104, Mar. 2016.

A. Maros, N. Faleev, R. R. King, and C. B. Honsberg, “Growth and characterization of GaAs1−x−ySbxNy/GaAs heterostructures for multijunction solar cell applications,” Journal of Vacuum Science & Technology B, vol. 34, no. 2, p. 02L106, Mar. 2016.

A. Maros et al., “Critical thickness investigation of MBE-grown GaInAs/GaAs and GaAsSb/GaAs heterostructures,” Journal of Vacuum Science & Technology B, vol. 34, no. 2, p. 02L113, Mar. 2016.

S. Kurtz, H. Atwater, A. Rockett, T. Buonassisi, C. Honsberg, and J. Benner, “Solar research not finished,” Nat Photon, vol. 10, no. 3, pp. 141–142, Mar. 2016.

C. A. M. Fabien, A. Maros, C. B. Honsberg, and W. A. Doolittle, “III-Nitride Double-Heterojunction Solar Cells With High In-Content InGaN Absorbing Layers: Comparison of Large-Area and Small-Area Devices,” IEEE Journal of Photovoltaics, vol. 6, no. 2, pp. 460–464, Mar. 2016.

A. Maros, N. Faleev, R. R. King, and C. B. Honsberg, “Growth and characterization of GaAs1−x−ySbxNy/GaAs heterostructures for multijunction solar cell applications,” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 34, no. 2, p. 02L106, Feb. 2016.

P. Muralidharan, S. Bowden, S. M. Goodnick, and D. Vasileska, “A multiscale modeling approach to study transport in silicon heterojunction solar cells,” presented at the IMAPS 12th International Conference and Exhibition on Device Packaging, 2016.

A. Augusto, P. Balaji, H. Jain, S. Y. Herasimenka, and S. G. Bowden, “Heterojunction solar cells on flexible silicon wafers,” MRS Advances, vol. 1, no. 15, pp. 997–1002, Jan. 2016.

P. Muralidharan, S. Bowden, S. M. Goodnick, and D. Vasileska, “A Multiscale Modeling Approach to Study Transport in Silicon Heterojunction Solar Cells,” Additional Conferences (Device Packaging, HiTEC, HiTEN, & CICMT), vol. 2016, no. DPC, pp. 002095–002110, Jan. 2016.

P. Muralidharan, S. Bowden, S. M. Goodnick, and D. Vasileska, “A multiscale modeling approach to study transport in silicon heterojunction solar cells,” presented at the IMAPS 12th International Conference and Exhibition on Device Packaging, 2016.

A. Augusto, P. Balaji, H. Jain, S. Y. Herasimenka, and S. G. Bowden, “Heterojunction solar cells on flexible silicon wafers,” MRS Advances, vol. FirstView, pp. 1–6, Jan. 2016.

J. Oh, G. TamizhMani, S. Bowden, and S. Garner, “Surface Disruption Method With Flexible Glass to Prevent Potential-Induced Degradation of the Shunting Type in PV Modules,” IEEE Journal of Photovoltaics, vol. PP, no. 99, pp. 1–6, 2016.

Y. Kim, N. N. Faleev, K.-Y. Ban, J. O. Kim, S. J. Lee, and C. B. Honsberg, “Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well,” J. Phys. D: Appl. Phys., vol. 49, no. 30, p. 305102, 2016.

Y. Kim, K. Y. Ban, S. N. Dahal, H. McFelea, and C. Honsberg, “Detection of the third transition of InAs/GaAsSb quantum dots,” Journal of Ceramic Processing Research, vol. 17, no. 4, 2016.

K.-Y. Ban, Y. Kim, D. Kuciauskas, S. P. Bremner, and C. B. Honsberg, “Investigation of carrier dynamics in InAs/GaAsSb quantum dots with different silicon delta-doping levels,” Semicond. Sci. Technol., vol. 31, no. 12, p. 125010, 2016.

C. Honsberg et al., “Front- and Rear-Emitter Screen Printed Silicon Heterojunction Solar Cells with >20% Efficiency,” 31st European Photovoltaic Solar Energy Conference and Exhibition, pp. 761–764, Nov. 2015.

P. Muralidharan, D. Vasileska, S. M. Goodnick, and S. Bowden, “A kinetic Monte Carlo study of defect assisted transport in silicon heterojunction solar cells,” Phys. Status Solidi C, vol. 12, no. 9–11, pp. 1198–1200, Nov. 2015.

J. Oh, S. Bowden, and G. TamizhMani, “Potential-Induced Degradation (PID): Incomplete Recovery of Shunt Resistance and Quantum Efficiency Losses,” IEEE Journal of Photovoltaics, vol. 5, no. 6, pp. 1540–1548, Nov. 2015.

Y. Kim, K.-Y. Ban, A. Boley, D. J. Smith, and C. B. Honsberg, “Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots,” Applied Physics Letters, vol. 107, no. 17, p. 173109, Oct. 2015.

Y. Kim, K.-Y. Ban, C. Zhang, and C. B. Honsberg, “Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells,” Applied Physics Letters, vol. 107, no. 15, p. 153103, Oct. 2015.

D. Tang, Y. Kim, N. Faleev, C. B. Honsberg, and D. J. Smith, “Investigation of single-layer/multilayer self-assembled InAs quantum dots on GaAs1-xSbx/GaAs composite substrates,” Journal of Applied Physics, vol. 118, no. 9, p. 094303, Sep. 2015.

J. J. Williams et al., “High growth speed of gallium nitride using ENABLE-MBE,” Journal of Crystal Growth, vol. 425, pp. 129–132, Sep. 2015.

M. M. Karow, N. N. Faleev, A. Maros, and C. B. Honsberg, “Defect Creation in InGaAs/GaAs Multiple Quantum Wells – II. Optical Properties,” Journal of Crystal Growth, vol. 425, pp. 49–53, Sep. 2015.

M. M. Karow, N. N. Faleev, D. J. Smith, and C. B. Honsberg, “Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties,” Journal of Crystal Growth, vol. 425, pp. 43–48, Sep. 2015.

Zachary A Kiefer et al., “Student-Led Pilot Line Development at ASU: Heterojunction and Diffused Cell Fabrication through Education,” presented at the 25th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes, Keystone, Colorado, USA., 2015.

Stuart Bowden, T. Blake Jennings, Padmapriya Rangarajan, Sepehr Rostamzadeh, Varun Gupta, and Ronald A. Sinton, “Lilac: A Photovoltaic Module Tester,” presented at the 25th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes, Keystone, Colorado, USA, 2015.

Lynelle Whitehead, Jacob Markey, Danny Simonet, Michael Minjares, Mark Bailly, and Stuart Bowden, “Optimization of Intermediate Process Steps for Rear Laser Formed Contacts,” presented at the 25th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes, Keystone, Colorado, USA., 2015.

Kevin Tyler, Stanislau Herasimenka, Stuart Bowden, and Clarence Tracy, “Interconnection of Solar Cells in PV Modules using Copper Wires and Aluminum Foil,” presented at the 25th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes, Keystone, Colorado, USA., 2015.

Y. Kim, K.-Y. Ban, and C. B. Honsberg, “Multi-stacked InAs/GaAs quantum dots grown with different growth modes for quantum dot solar cells,” Applied Physics Letters, vol. 106, no. 22, p. 222104, Jun. 2015.

J. Oh, G. TamizhMani, S. Bowden, and S. Garner, “Application of flexible glass to prevent PID in PV modules,” in Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd, 2015, pp. 1–4.

J. Oh, S. Bowden, G. TamizhMani, and P. Hacke, “Quantum efficiency loss after PID stress: Wavelength dependence on cell surface and cell edge,” in Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd, 2015, pp. 1–4.

P. Muralidharan, D. Vasileska, S. M. Goodnick, and S. Bowden, “A Kinetic Monte Carlo approach to study transport in amorphous silicon/crystalline silicon HIT cells,” in 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, pp. 1–4.

P. Muralidharan, D. Vasileska, S. M. Goodnick, and S. Bowden, “A Kinetic Monte Carlo approach to study transport in amorphous silicon/crystalline silicon HIT cells,” in 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, pp. 1–4.

A. Maros et al., “High temperature characterization of GaAs single junction solar cells,” in 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, pp. 1–5.

A. Augusto, L. Reboulet, S. Y. Herasimenka, and S. G. Bowden, “Flexible silicon heterojunctions solar cells and modules,” in 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, pp. 1–3.

A. Augusto, L. Reboulet, S. Y. Herasimenka, and S. G. Bowden, “Flexible silicon heterojunctions solar cells and modules,” in Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd, 2015, pp. 1–3.

J.-Y. Choi, T. L. Alford, and C. B. Honsberg, “Fabrication of Periodic Silicon Nanopillars in a Two-Dimensional Hexagonal Array with Enhanced Control on Structural Dimension and Period,” Langmuir, vol. 31, no. 13, pp. 4018–4023, Apr. 2015.

J.-Y. Choi, T. L. Alford, and C. B. Honsberg, “Fabrication of Periodic Silicon Nanopillars in a Two-Dimensional Hexagonal Array with Enhanced Control on Structural Dimension and Period,” Langmuir, vol. 31, no. 13, pp. 4018–4023, Apr. 2015.

J.-Y. Choi et al., “Advances in 2D/3D Printing of Functional Nanomaterials and Their Applications,” ECS J. Solid State Sci. Technol., vol. 4, no. 4, pp. P3001–P3009, Jan. 2015.

N. Vulic, J. Y. Choi, C. B. Honsberg, and S. M. Goodnick, “Silica nanosphere lithography defined light trapping structures for ultra-thin si photovoltaics,” presented at the 2015 MRS Spring Meeting, 2015.

Y. Kim, K.-Y. Ban, D. Kuciauskas, P. C. Dippo, and C. B. Honsberg, “Impact of delta-doping position on photoluminescence in type-II InAs/GaAsSb quantum dots,” Semicond. Sci. Technol., vol. 30, no. 3, p. 035006, 2015.

Y. Kim, K.-Y. Ban, D. Kuciauskas, P. C. Dippo, and C. B. Honsberg, “Effect of silicon delta-doping density on optical properties of type-II InAs/GaAsSb quantum dots,” Journal of Crystal Growth, vol. 406, pp. 68–71, Nov. 2014.

Y. Zou, C. B. Honsberg, A. Freundlich, and S. M. Goodnick, “Simulation of electron escape from GaNAs/GaAs quantum well solar cells,” in Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th, 2014, pp. 2908–2911.

J. J. Williams et al., “Structural and optical investigations of GaN-Si interface for a heterojunction solar cell,” in Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th, 2014, pp. 0841–0843.

N. Vulic, M. Patil, Y. Zou, S. H. Amilineni, C. B. Honsberg, and S. M. Goodnick, “Matching AC loads to solar peak production using thermal energy storage in building cooling systems - A case study at Arizona State University,” in Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th, 2014, pp. 1504–1509.

A. Maros, N. Faleev, and C. B. Honsberg, “Defect creation in low lattice-mismatched epitaxial structures,” in Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th, 2014, pp. 0499–0504.

S. Limpert et al., “Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell,” in Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th, 2014, pp. 0836–0840.

J. Lee and C. B. Honsberg, “Limiting efficiencies of integrating single junction with intermediate band solar cells for multiphysics effects,” in Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th, 2014, pp. 1068–1072.

M. M. Karow, N. N. Faleev, C.-Z. Ning, D. J. Smith, and C. B. Honsberg, “InGaAs/GaAs MQWs: Correlation of crystal and physical properties,” in Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th, 2014, pp. 0660–0665.

S. Y. Herasimenka, C. J. Tracy, W. J. Dauksher, C. B. Honsberg, and S. Bowden, “A simplified process flow for silicon heterojunction interdigitated back contact solar cells: Using shadow masks and tunnel junctions,” in Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th, 2014, pp. 2486–2490.

N. N. Faleev, D. J. Smith, and C. B. Honsberg, “Epitaxial growth: Phenomenological model of defect creation,” in Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th, 2014, pp. 0724–0728.

L. Ding et al., “Thin silicon solar cells: A path to 35% shockley-queisser limits: a DOE funded FPACE II project,” in Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th, 2014, pp. 2467–2470.

J.-Y. Choi and C. B. Honsberg, “Silicon nano-fabrication by using silica nanosphere lithography technique for enhanced light management,” in Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th, 2014, pp. 2206–2208.

S. Bowden, S. Herasimenka, W. Dauksher, C. Tracy, and C. Honsberg, “High open-circuit voltages on thin silicon solar cells,” in Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th, 2014, pp. 0577–0581.

K. Ghosh, S. Bowden, and C. Honsberg, “Devices and methods for providing carrier selective contact devices,” US20140137933 A1, 22-May-2014.

J. Lee and C. B. Honsberg, “Limiting Efficiencies of Multijunction Solar Cells With Multiple Exciton Generation,” IEEE Journal of Photovoltaics, vol. 4, no. 3, pp. 874–880, May 2014.

V. Sharma, C. Tracy, D. Schroder, S. Herasimenka, W. Dauksher, and S. Bowden, “Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells,” Applied Physics Letters, vol. 104, no. 5, p. 053503, Feb. 2014.

J. J. Williams, T. L. Williamson, M. A. Hoffbauer, Y. Wei, N. N. Faleev, and C. Honsberg, “Growth of high crystal quality InN by ENABLE-MBE,” Phys. Status Solidi C, vol. 11, no. 3–4, pp. 577–580, 2014.

Y. Kim et al., “Structural and optical properties of multi-stack InAs/GaAsSb quantum dots with different Sb composition,” in 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, June 8, 2014  -  June 13, 2014, 2014, pp. 1056–1058.

J.-Y. Choi, T. L. Alford, and C. B. Honsberg, “Solvent-Controlled Spin-Coating Method for Large-Scale Area Deposition of Two-Dimensional Silica Nanosphere Assembled Layers,” Langmuir, vol. 30, no. 20, pp. 5732–5738, 2014.

S. Y. Herasimenka, C. J. Tracy, V. Sharma, N. Vulic, W. J. Dauksher, and S. G. Bowden, “Surface passivation of n-type c-Si wafers by a-Si/SiO2/SiNx stack with <1 cm/s effective surface recombination velocity,” Applied Physics Letters, vol. 103, no. 18, p. 183903, Oct. 2013.

S. P. Bremner, K.-Y. Ban, N. N. Faleev, C. B. Honsberg, and D. J. Smith, “Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001),” Journal of Applied Physics, vol. 114, no. 10, p. 103511, Sep. 2013.

S. Y. Herasimenka, W. J. Dauksher, and S. G. Bowden, “>750 mV open circuit voltage measured on 50 μm thick silicon heterojunction solar cell,” Applied Physics Letters, vol. 103, no. 5, pp. 053511-053511-4, Aug. 2013.

S. Bowden, K. Ghosh, and C. Honsberg, “Solar cells without p-n junctions,” SPIE Newsroom, Jul. 2013.

J. J. Williams, K. Ghosh, N. N. Faleev, T. L. Williamson, and C. B. Honsberg, “Induced junction III-nitride solar cells for wide band gap solar cells: Modeling charge transport and band bending in polarized material,” in Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, 2013, pp. 2144–2146.

V. Sharma, C. Tracy, D. Schroder, M. Flores, B. Dauksher, and S. Bowden, “Study and manipulation of charges present in silicon nitride films,” in Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, 2013, pp. 1288–1293.

T. Reblitz, C. Tracy, B. Dauksher, S. Herasimenka, and S. Bowden, “p+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization,” in Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, 2013, pp. 2257–2262.

G. Pickett, S. Bowden, J. Husman, K. Ross, D. Shell, and K. Nelson, “Student-led solar cell fabrication pilot line: Engaging the next generation of PV engineers,” in Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, 2013, pp. 2389–2391.

K. G. Nelson, S. Brem, C. H. Foster, S. Bowden, J. Husman, and C. Honsberg, “Assessing the formation of misconceptions when students learn PV using current curricular tools,” in Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, 2013, pp. 2383–2388.

S. Limpert, S. Goodnick, C. Honsberg, G. Conibeer, and S. Bremner, “A hot carrier solar cell device model using a coupled electron phonon energy balance model,” in Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, 2013, pp. 1054–1059.

J. Lee and C. B. Honsberg, “The impact of quantum yield through limiting efficiency for multiple exciton generation with intermediate band solar cells,” in Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, 2013, pp. 1041–1045.

J. Lee and C. B. Honsberg, “Impact of threshold energy of multiple exciton generation solar cells,” in Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, 2013, pp. 1050–1053.

J. Lee, S. M. Goodnick, and C. B. Honsberg, “Limiting efficiency of silicon based nanostructure solar cells for multiple exciton generation,” in Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, 2013, pp. 1046–1049.

A. Jeffries, S. Bowden, C. Honsberg, and M. Bertoni, “Sensitivity analysis of materials availability for terawatt PV deployment,” in Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, 2013, pp. 3353–3356.

K. Ghosh, S. Herasimenka, B. Dauksher, and S. Bowden, “Correlation between lifetime curve and performance of amorphous silicon/ crystalline silicon heterostructure solar cell,” in Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, 2013, pp. 1232–1237.

S. Gangam et al., “In-situ stage development for high-temperature X-ray nanocharacterization of defects in solar cells,” in Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, 2013, pp. 1394–1395.

J.-Y. Choi and C. B. Honsberg, “Reactive ion etching surface texturing of c-Si using silica nanosphere lithography technique for solar cell application,” in Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, 2013, pp. 1199–1202.

N. N. Faleev, C. Honsberg, and V. I. Punegov, “Quantitative analysis of the quantum dot superlattice by high-resolution x-ray diffraction,” Journal of Applied Physics, vol. 113, no. 16, p. 163506, Apr. 2013.

N. Faleev et al., “Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II—Transmission electron microscopy and atomic force microscopy,” Journal of Crystal Growth, vol. 365, pp. 35–43, Feb. 2013.

N. Faleev, N. Sustersic, N. Bhargava, J. Kolodzey, A. Y. Kazimirov, and C. Honsberg, “Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(0 0 1) and Ge(0 0 1) substrates: I—High-resolution x-ray diffraction and x-ray topography,” Journal of Crystal Growth, vol. 365, pp. 44–53, Feb. 2013.

K. Ghosh, S. Bowden, and C. Tracy, “Role of hot carriers in the interfacial transport in amorphous silicon/crystalline silicon heterostructure solar cells,” physica status solidi (a), vol. 210, no. 2, pp. 413–419, Feb. 2013.

S. M. Goodnick, N. Faleev, and C. Honsberg, “Nanoscale Photovoltaics and the Terawatt Challenge,” in Nanoscale Applications for Information and Energy Systems, A. Korkin and D. J. Lockwood, Eds. Springer New York, 2013, pp. 77–116.

J. J. Williams et al., “Inducing a junction in n-type InxGa(1-x)N,” Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures, vol. 31, no. 3, p. 03C127-03C127-6, 2013.

D. Lubyshev et al., “MBE growth of Sb-based nBn photodetectors on large diameter GaAs substrates,” 2013, vol. 8704, pp. 870412-870412–10.

S. M. Goodnick, C. Honsberg, and Y. Zou, “Ultrafast carrier relaxation processes in advanced concept solar cells,” in Optics for Solar Energy, SOLAR 2013, November 3, 2013  -  November 7, 2013, 2013.

S. Bowden, K. Ghosh, and C. Honsberg, “Non PN junction solar cells using carrier selective contacts,” 2013, vol. 8620, p. 86200T–86200T–6.

B. R. Jampana, C. R. Weiland, R. L. Opila, I. T. Ferguson, and C. B. Honsberg, “Optical absorption dependence on composition and thickness of InxGa1 − xN (0.05 < × < 0.22) grown on GaN/sapphire,” Thin Solid Films, vol. 520, no. 22, pp. 6807–6812, Sep. 2012.

B. R. Jampana, C. R. Weiland, R. L. Opila, I. T. Ferguson, and C. B. Honsberg, “Optical absorption dependence on composition and thickness of InxGa1−xN (0.05&lt;×&lt;0.22) grown on GaN/sapphire,” Thin Solid Films, vol. 520, no. 22, pp. 6807–6812, Sep. 2012.

T. Reblitz, S. Bowden, and S. Herasimenka, “Web applications for: centralization of photovoltaic cell production and characterization data, and processing of Sentaurus simulation files,” in proceedings of 22nd Workshop on Crystalline Silicon Solar Cells & Modules, Vail Colorado, 2012.

V. Sharma and S. Bowden, “Peak load offset and the effect of dust storms on 10 MWp distributed grid tied photovoltaic systems installed at Arizona State University,” presented at the 38th IEEE Photovoltaic Specialists Conference, 2012, pp. 000590–000595.

J. Lee and C. B. Honsberg, “Limiting efficiencies over 50% using multijunction solar cells with multiple exciton generation,” in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 000062–000067.

J. Lee, S. N. Dahal, and C. B. Honsberg, “Theoretical analysis for intermediate band and tandem hybrid solar cell materials,” in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 000068–000072.

C. B. Honsberg and S. M. Goodnick, “Realizing Terawatt-Scale Solar Electricity: Nanotechnology-Enabled Physical Mechanisms and Material Properties,” IEEE Nanotechnology Magazine, vol. 6, no. 2, pp. 6–14, Jun. 2012.

S. Herasimenka, P. Altermatt, S. Bowden, and C. Honsberg, “Reassessment of classic recombination mechanisms in silicon point contact concentrator solar cell,” presented at the 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 001055–001058.

S. M. Goodnick, S. Limpert, C. Honsberg, and P. Lugli, “Simulation of carrier relaxation in hot carrier solar cells,” in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 001657–001662.

K. Ghosh, C. Tracy, S. Goodnick, and S. Bowden, “Effect of band bending and band offset in the transport of minority carriers across the ordered/disordered interface of a-Si/c-Si heterojunction solar cell,” presented at the 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 000221–000226.

K. Ghosh, C. Tracy, and S. Bowden, “Experimental and theoretical verification of the presence of inversion region in a-Si/c-Si heterojunction solar cells with an intrinsic layer,” presented at the 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 001046–001048.

S. P. Bremner and C. B. Honsberg, “Intermediate band solar cell with non-ideal band structure under AM1.5 spectrum,” in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 000021–000024.

S. Bremner, K. Ghosh, N. Ekins-Daukes, C. Honsberg, and S. Goodnick, “Issues in the physical measurement of the intermediate band effect,” in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 000641–000646.

S. Bowden and J. LeBeau, “Laser wafering,” in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 001826–001829.

X. Wang et al., “Lateral spectrum splitting concentrator photovoltaics: direct measurement of component and submodule efficiency,” Prog. Photovolt: Res. Appl., vol. 20, no. 2, pp. 149–165, Mar. 2012.

V. Sharma, A. Bailey, B. Dauksher, C. Tracy, S. Bowden, and B. O’Brien, “Characterization and comparison of silicon nitride films deposited using two novel processes,” J. Vac. Sci. Technol. A, vol. 30, no. 2, pp. 021201-1, Feb. 2012.

J. Lee and C. B. Honsberg, “The thermodynamic limits of tandem photovoltaic devices with intermediate band,” Proceedings of SPIE, vol. 8256, no. 1, p. 82560Q–82560Q–12, Feb. 2012.

S. M. Goodnick and C. B. Honsberg, “Modeling carrier relaxation in hot carrier solar cells,” Proceedings of SPIE, vol. 8256, no. 1, p. 82560W–82560W–10, Feb. 2012.

K.-Y. Ban, S. P. Bremner, D. Kuciauskas, S. N. Dahal, and C. B. Honsberg, “The role of Sb compositions on the properties of InAs/GaAsSb quantum dots (QDs),” Proceedings of SPIE, vol. 8256, no. 1, p. 82561C–82561C–6, Feb. 2012.

X. Wang et al., “Lateral spectrum splitting concentrator photovoltaics: Direct measurement of component and submodule efficiency,” Progress in Photovoltaics: Research and Applications, vol. 20, no. 2, pp. 149–165, 2012.

N. N. Faleev, C. B. Honsberg, and D. J. Smith, “Four stages of defect creation in epitaxial structures: High resolution X-ray diffraction and transmission electron microscopy characterization,” in ISTFA 2012, 11-15 Nov. 2012, 2012, pp. 337–46.

K.-Y. Ban, D. Kuciauskas, S. P. Bremner, and C. B. Honsberg, “Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence,” Journal of Applied Physics, vol. 111, no. 10, pp. 104302-104302–4, 2012.

J. Lee and C. B. Honsberg, “Thermodynamic Limits of Hybrid Photovoltaic Systems Using Multiple Junction Solar Cells with Carrier Transitions at Intermediate Band,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.

J. Lee and C. B. Honsberg, “Limiting Efficiencies of Intermediate Band Solar Cell Assisted with Multiple Exciton Generation,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.

C. B. Honsberg, S. P. Bremner, J. Lee, A. J. Bailey, and S. N. Dahal, “Hyrbid Advanced Concept Solar Cells,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.

S. M. Goodnick and C. B. Honsberg, “Ultrafast Carrier Relaxation and Nonequilibrium Phonons in Hot Carrier Solar Cells,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.

K. Ghosh, N.-K. Song, M.-S. Oh, D.-S. Kim, and S. Bowden, “Extraction of recombination parameters of a-Si/c-Si solar cell from lifetime spectroscopy,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.

K. Ghosh and C. B. Honsberg, “Absorption coefficient for multiple-quasi fermi level system in quantum well,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.

N. Faleev, S. P. Bremner, K.-Y. Ban, D. Smith, and C. B. Honsberg, “Investigation of the Correlations of Structural and Physical Features of Inas Quantum Dots, Embedded Between Strain-Relief Gaassb Layers with Different Sb Compositions,” in Conference Record of the 37th IEEE Photovoltaic Specialists Conference, 2011.

S. N. Dahal and C. B. Honsberg, “Effect of Elastic Strain on Band Edge Alignment and Position of Intermediate Band of Isolated and Coupled Quantum Dots,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.

Keun-Yong Ban, Woong-Ki Hong, S. P. Bremner, S. N. Dahal, H. McFelea, and C. B. Honsberg, “Controllability of the subband occupation of InAs quantum dots on a delta-doped GaAsSb barrier,” Journal of Applied Physics, vol. 109, no. 1, p. 014312 (6 pp.), Jan. 2011.

B. Chhabra, C. Weiland, R. L. Opila, and C. B. Honsberg, “Surface characterization of quinhydrone-methanol and iodine-methanol passivated silicon substrates using X-ray photoelectron spectroscopy,” Physica Status Solidi A, vol. 208, no. 1, pp. 91–5, Jan. 2011.

V. Sharma, A. Bailey, B. Dauksher, C. Tracy, S. Bowden, and B. O’Brien, “Characterization and comparison of silicon nitride films deposited using two novel processes,” in 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 2011, pp. 002206–002211.

K. G. Nelson, J. Husman, S. K. Brem, C. Honsberg, and S. Bowden, “Optimizing educational approaches for University Photovoltaics education,” in 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 2011, pp. 001211–001216.

K. G. Nelson, J. Husman, S. K. Brem, C. Honsberg, and S. Bowden, “Optimizing educational approaches for University Photovoltaics education,” in 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 2011, pp. 001211–001216.

M. Lu, U. Das, S. Bowden, S. Hegedus, and R. Birkmire, “Optimization of interdigitated back contact silicon heterojunction solar cells: tailoring hetero-interface band structures while maintaining surface passivation,” Progress in Photovoltaics: Research and Applications, vol. 19, no. 3, pp. 326–338, 2011.

J. Lee and C. Honsberg, “Thermodynamic limits of hybrid photovoltaic systems using multiple junction solar cells with carrier transitions at intermediate band,” in 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 2011, pp. 002082–002086.

J. Lee and C. Honsberg, “Limiting efficiencies of intermediate band solar cell assisted with multiple exciton generation,” in 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 2011, pp. 002074–002077.

C. B. Honsberg, S. Bremner, J. Lee, A. Bailey, and S. Dahal, “Hyrbid advanced concept solar cells,” in 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 2011, pp. 001903–001906.

S. M. Goodnick and C. Honsberg, “Ultrafast carrier relaxation and nonequilibrium phonons in hot carrier solar cells,” in 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 2011, pp. 002066–002070.

K. Ghosh and C. Honsberg, “Absorption coefficient for Multiple-Quasi Fermi level system in quantum well,” in 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 2011, pp. 002622–002624.

K. Ghosh, Ghosh, N.-K. Song, M.-S. Oh, D.-S. Kim, and S. Bowden, “Extraction of recombination parameters of amorphous silicon/crystalline silicon solar cell from lifetime spectroscopy,” in 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 2011, pp. 001429–001432.

N. Faleev, K. Ban, S. Bremner, D. J. Smith, and C. Honsberg, “Investigation of the main correlations between structural and physical propertiess of InAs quantum dots, embedded between strain-relief GaAsSb layers,” in 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 2011, pp. 000474–000479.

S. N. Dahal and C. Honsberg, “Effect of elastic strain on band edge alignment and position of intermediate band of isolated and coupled quantum dots,” in 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 2011, pp. 002042–002046.

K.-Y. Ban, S. P. Bremner, D. Kuciauskas, S. N. Dahal, and C. B. Honsberg, “Detection of the third transition of InAs/GaAsSb quantum dots,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.

K.-Y. Ban, S. P. Bremner, S. N. Dahal, and C. B. Honsberg, “Investigation of Intersubband Transitions of InAs/GaAsSb Quantum Dots,” presented at the NAMBE Conference, San Diego, CA, 2011.

K.-Y. Ban, S. P. Bremner, D. Kuciauskas, S. N. Dahal, and C. B. Honsberg, “Detection of the third transition of InAs/GaAsSb quantum dots,” in 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 2011, pp. 003503–003506.

A. J. Bailey and C. B. Honsberg, “Thermal-quantum solar cells,” in 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 2011, pp. 002036–002041.

A. Pancholi, S. P. Bremner, J. Boyle, V. G. Stoleru, and C. B. Honsberg, “Variability of heterostructure type with thickness of barriers and  temperature in the InAs/GaAsSb quantum dot system RID G-1695-2011,” Sol. Energy Mater. Sol. Cells, vol. 94, no. 6, pp. 1025–1030, Jun. 2010.

Jongwon Lee and C. Honsberg, “Detailed balance calculations of multiple exciton generation and Tandem Hybrid solar cells,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 002932–002937.

B. Jampana et al., “Realization of InGaN solar cells on (111) silicon substrate,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 000457–000460.

S. Herasimenka, K. Ghosh, S. Bowden, and C. Honsberg, “2D modeling of Silicon Heterojunction Interdigitated Back Contact solar cells,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 001390–001394.

K. Ghosh, C. J. Tracy, S. Herasimenka, C. Honsberg, and S. Bowden, “Explanation of the device operation principle of amorphous silicon/ crystalline silicon heterojunction solar cell and role of the inversion of crystalline silicon surface,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 001383–001386.

K. Ghosh, C. J. Tracy, B. Dauksher, S. Herasimenka, C. Honsberg, and S. Bowden, “Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 002680–002683.

S. N. Dahal, S. P. Bremner, and C. B. Honsberg, “Identification of candidate material systems for quantum dot solar cells  including the effect of strain,” Prog. Photovoltaics, vol. 18, no. 4, pp. 233–239, Jun. 2010.

S. N. Dahal, Keun-Yong Ban, and C. Honsberg, “Absorption coefficients of quantum dot intermediate band material with negligible valence band offsets,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 001797–001799.

B. Chhabra, R. L. Opila, and C. B. Honsberg, “12.4% efficient freestanding 30µm ultra-thin silicon solar cell using a-Si/c-Si heterostructure,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 001325–001329.

B. Chhabra, R. Kamada, R. L. Opila, and C. B. Honsberg, “Effect of small continuous loads on system efficiency,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 002327–002331.

S. P. Bremner, K. Ghosh, L. Nataraj, S. G. Cloutier, and C. B. Honsberg, “Influence of Sb/As soak times on the structural and optical properties of GaAsSb/GaAs interfaces,” Thin Solid Films, vol. 519, no. 1, pp. 64–8, Jun. 2010.

Keun-Yong Ban et al., “Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots,” Applied Physics Letters, vol. 96, no. 18, p. 183101 (3 pp.), May 2010.

K.-Y. Ban, S. N. Dahal, C. B. Honsberg, L. Nataraj, S. P. Bremner, and S. G. Cloutier, “Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well,” Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), vol. 28, no. 3, pp. 3–6, May 2010.

B. R. Jampana et al., “Design and Realization of Wide-Band-Gap (similar to 2.67 eV) InGaN p-n  Junction Solar Cell,” IEEE Electron Device Lett., vol. 31, no. 1, pp. 32–34, Jan. 2010.

B. Chhabra, S. Bowden, R. L. Opila, and C. B. Honsberg, “High effective minority carrier lifetime on silicon substrates using quinhydrone-methanol passivation,” Appl. Phys. Lett., vol. 96, no. 6, p. 063502, 2010.

S. Bowden, C. Honsberg, and D. Schroder, “Moore’s Law of Photovoltaics,” Future Photovoltaics, no. 1, 2010.

K.-Y. Ban, D. Kuciauskas, S. P. Bremner, and C. B. Honsberg, “Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 20-25 June 2010, Piscataway, NJ, USA, 2010, pp. 003306-9.

K.-Y. Ban, D. Kuciauskas, S. P. Bremner, S. N. Dahal, N. J. Ekins-Daukes, and C. B. Honsberg, “Controllability of the  occupation of quantum dot electronic states and determination of minimum valence band offset in InAs/GaAsSb,” presented at the 25th EU PVSEC & WCPEC-5, Valencia, Spain, 2010.

K.-Y. Ban, W.-K. Hong, and C. B. Honsberg, “Photoluminescence study of InAs quantum dots on a δ-doped GaAsSb barrier,” presented at the MRS Spring Meeting, San Francisco, CA, USA, 2010.

K.-Y. Ban, S. N. Dahal, C. B. Honsberg, L. Nataraj, S. P. Bremner, and S. G. Cloutier, “Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well,” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 28, p. C3I6-C3I9, 2010.

M. Y. Levy and C. Honsberg, “Absorption coefficients of intermediate-band media,” Journal of Applied Physics, vol. 106, no. 7, p. 073103 (12 pp.), Oct. 2009.

A. Melton, B. Jampana, R. Opila, C. Honsberg, M. Jamil, and I. Ferguson, “Minimizing shadow losses in III-nitride solar cells,” in Proceedings of SPIE, 2009, vol. 7409, pp. 740916-740916–7.

S. Bowden, “From the Valley of Death to the Golden Decade: Crystalline Silicon Solar Cells from 10 to 100 microns,” in 19th Workshop on Crystalline Silicon Solar Cells and Modules, Vail, Colorado, 2009, pp. 192–195.

N. Faleev et al., “Correlation of crystalline defects with photoluminescence of InGaN layers,” Applied Physics Letters, vol. 95, no. 5, pp. 051915-051915-3, Aug. 2009.

Meijun Lu, U. Das, S. Bowden, S. Hegedus, and R. Birkmire, “Optimization of interdigitated back contact silicon heterojunction solar cells by two-dimensional numerical simulation,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, pp. 001475–001480.

Xiaoting Wang et al., “Improved outdoor measurements for Very High Efficiency Solar Cell sub-modules,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, pp. 000409–000414.

Ruiying Hao et al., “Thin silicon solar cells using epitaxial lateral overgrowth structure,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, pp. 000949–000953.

J. G. Mutitu, Shouyuan Shi, A. Barnett, C. Honsberg, and D. W. Prather, “Light trapping designs for thin silicon solar cells based on photonic crystal and metallic diffractive grating structures,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, pp. 000579–000583.

B. Jampana, A. Melton, M. Jamil, I. Ferguson, R. Opila, and C. Honsberg, “InGaN solar cell design by surface inversion caused by piezoelectric polarization,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, pp. 002175–002178.

S. Bremner, N. Faleev, L. Nataraj, S. Cloutier, S. Dahal, and C. Honsberg, “Passivation of InAs quantum dots for novel photovoltaics,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, pp. 001306–001311.

K.-Y. Ban, S. N. Dahal, and C. B. Honsberg, “Optical properties of delta doped InAs/GaAs0.88Sb0.12 structure for novel concept solar cells,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, pp. 001264–001267.

A. Barnett et al., “Very High Efficiency Solar Cell Modules,” Prog. Photovoltaics, vol. 17, no. 1, pp. 75–83, Jan. 2009.

C. P. Murcia, Ruiying Hao, T. Biegala, C. Honsberg, and A. Barnett, “High performance thin crystalline silicon solar cell grown on silicon-on-insulator,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), 7-12 June 2009, Piscataway, NJ, USA, 2009, p. 4 pp.

A. Melton et al., “High indium composition (20%) InGaN epi-layers on ZnO substrates for very high efficiency solar cells,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), 7-12 June 2009, Piscataway, NJ, USA, 2009, p. 4 pp.

B. R. Jampana, I. T. Ferguson, R. L. Opila, and C. B. Honsberg, “Utilizing Polarization Induced Band Bending for InGaN Solar Cell Design,” in Materials Research Society Symposium. Compound Semiconductors for Energy Applications and Environmental Sustainability, 14-16 April 2009, Warrendale, PA, USA, 2009, pp. 3–8.

B. R. Jampana, N. N. Faleev, I. T. Ferguson, R. L. Opila, and C. B. Honsberg, “Crystalline Perfection of Epitaxial Structure: Correlation With Composition, Thickness, and Elastic Strain of Epitaxial Layers,” in Materials Research Society Symposium. Compound Semiconductors for Energy Applications and Environmental Sustainability, 14-16 April 2009, Warrendale, PA, USA, 2009, pp. 71–6.

B. Jampana et al., “Correlation between crystalline perfection of InGaN epi-layers and wide-band gap InGaN solar cell performance,” in Proceedings of the 34th IEEE Photovoltaic Specialists Conference, Philadelphia, PA, USA, 2009.

B. Chhabra, C. B. Honsberg, and R. L. Opila, “High open circuit voltages on  50 micron silicon substrates by amorphous-silicon (a-Si) and quinhydrone-methanol (QHY-ME) passivation,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), 7-12 June 2009, Piscataway, NJ, USA, 2009, p. 4 pp.

K.-Y. Ban, S. N. Dahal, S. P. Bremner, and C. B. Honsberg, “Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well,” presented at the NAMBE Conference, Princeton, NJ, USA, 2009.