Publications

[1]
K. G. Nelson, R. Koselar, and J. Husman, “Creating a model for beneficial use of educational technology through a photovoltaics engineering website.,” presented at the American Society for Engineering Education Annual Conference, San Antonio, TX, 2012.

[2]
K. Ghosh, C. J. Tracy, and S. M. Goodnick, “Effect of band bending and band offset in the transport of minority carriers across the ordered/disordered interface of a-Si/c-Si heterojunction solar cell,” presented at the Proceedings of the 38th IEEE Photovoltaic Specialists Conference, Austin, TX, USA, 2012.

[3]
K. Ghosh, C. J. Tracy, and S. Bowden, “Experimental and theoretical verification of the presence of inversion region in a-Si /c-Si heterojunction solar cells with an intrinsic layer,” presented at the Proceedings of the 38th IEEE Photovoltaic Specialists Conference, Austin, TX, USA, 2012.

[4]
J. Lee and C. B. Honsberg, “The thermodynamic limits of tandem photovoltaic devices with intermediate band,” Proceedings of SPIE, vol. 8256, no. 1, p. 82560Q–82560Q–12, Feb. 2012.

[5]
S. M. Goodnick and C. B. Honsberg, “Modeling carrier relaxation in hot carrier solar cells,” Proceedings of SPIE, vol. 8256, no. 1, p. 82560W–82560W–10, Feb. 2012.

[6]
K.-Y. Ban, S. P. Bremner, D. Kuciauskas, S. N. Dahal, and C. B. Honsberg, “The role of Sb compositions on the properties of InAs/GaAsSb quantum dots (QDs),” Proceedings of SPIE, vol. 8256, no. 1, p. 82561C–82561C–6, Feb. 2012.

[7]
V. Sharma, A. Bailey, B. Dauksher, C. Tracy, S. Bowden, and B. O’Brien, “Characterization and comparison of silicon nitride films deposited using two novel processes,” J. Vac. Sci. Technol. A, vol. 30, no. 2, p. 021201–1, 2012.

[8]
K. G. Nelson, C. Foster, M. Crowder, J. Husman, and T. Ganesh, “The Solar Energy Challenge: Engineering Notebook,” in Arizona Science Teachers Association, Mesa, AZ, 2011.

[9]
N. Chandra, V. Sharma, G. Y. Chung, and D. K. Schroder, “Four-point probe characterization of 4H silicon carbide,” Solid-State Electronics, vol. 64, no. 1, pp. 73–77, Oct. 2011.

[10]
V. Sharma, A. J. Bailey, B. Dauksher, C. J. Tracy, S. Bowden, and B. O’Brien, “Characterization and comparison of silicon nitride films deposited using two novel processes,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.

[11]
J. Lee and C. B. Honsberg, “Thermodynamic Limits of Hybrid Photovoltaic Systems Using Multiple Junction Solar Cells with Carrier Transitions at Intermediate Band,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.

[12]
J. Lee and C. B. Honsberg, “Limiting Efficiencies of Intermediate Band Solar Cell Assisted with Multiple Exciton Generation,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.

[13]
C. B. Honsberg, S. P. Bremner, J. Lee, A. J. Bailey, and S. N. Dahal, “Hyrbid Advanced Concept Solar Cells,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.

[14]
S. M. Goodnick and C. B. Honsberg, “Ultrafast Carrier Relaxation and Nonequilibrium Phonons in Hot Carrier Solar Cells,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.

[15]
K. Ghosh, N.-K. Song, M.-S. Oh, D.-S. Kim, and S. Bowden, “Extraction of recombination parameters of a-Si/c-Si solar cell from lifetime spectroscopy,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.

[16]
K. Ghosh and C. B. Honsberg, “Absorption coefficient for multiple-quasi fermi level system in quantum well,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.

[17]
N. Faleev, S. P. Bremner, K.-Y. Ban, D. Smith, and C. B. Honsberg, “Investigation of the Correlations of Structural and Physical Features of Inas Quantum Dots, Embedded Between Strain-Relief Gaassb Layers with Different Sb Compositions,” in Conference Record of the 37th IEEE Photovoltaic Specialists Conference, 2011.

[18]
S. N. Dahal and C. B. Honsberg, “Effect of Elastic Strain on Band Edge Alignment and Position of Intermediate Band of Isolated and Coupled Quantum Dots,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.

[19]
Keun-Yong Ban, Woong-Ki Hong, S. P. Bremner, S. N. Dahal, H. McFelea, and C. B. Honsberg, “Controllability of the subband occupation of InAs quantum dots on a delta-doped GaAsSb barrier,” Journal of Applied Physics, vol. 109, no. 1, p. 014312 (6 pp.), Jan. 2011.

[20]
B. Chhabra, C. Weiland, R. L. Opila, and C. B. Honsberg, “Surface characterization of quinhydrone-methanol and iodine-methanol passivated silicon substrates using X-ray photoelectron spectroscopy,” Physica Status Solidi A, vol. 208, no. 1, p. 91–5, Jan. 2011.

[21]
Katherine G. Nelson, Jenefer Husman, Sarah K. Brem, Christiana Honsberg, and Stuart Bowden, “Optimizing Educational Approaches for University Photovoltaics Education,” in Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.

[22]
K.-Y. Ban, S. P. Bremner, D. Kuciauskas, S. N. Dahal, and C. B. Honsberg, “Detection of the third transition of InAs/GaAsSb quantum dots,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.

[23]
K.-Y. Ban, S. P. Bremner, S. N. Dahal, and C. B. Honsberg, “Investigation of Intersubband Transitions of InAs/GaAsSb Quantum Dots,” presented at the NAMBE Conference, San Diego, CA, 2011.

[24]
A. J. Bailey and C. B. Honsberg, “Thermal-Quantum Solar Cells,” presented at the The 37th IEEE Photovoltaics Specialists Conference, Seattle, WA, 2011, 2011.

[25]
V. I. Punegov and N. N. Faleev, “Coherent and diffuse X-ray scattering from a multicomponent superlattice with quantum dots,” JETP Letters, vol. 92, no. 7, pp. 437–443, Dec. 2010.

[26]
A. Pancholi, S. P. Bremner, J. Boyle, V. G. Stoleru, and C. B. Honsberg, “Variability of heterostructure type with thickness of barriers and  temperature in the InAs/GaAsSb quantum dot system RID G-1695-2011,” Sol. Energy Mater. Sol. Cells, vol. 94, no. 6, pp. 1025–1030, Jun. 2010.

[27]
Jongwon Lee and C. Honsberg, “Detailed balance calculations of multiple exciton generation and Tandem Hybrid solar cells,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, p. 002932–002937.

[28]
B. Jampana, Tianming Xu, A. Melton, M. Jamil, R. Opila, C. Honsberg, and I. Ferguson, “Realization of InGaN solar cells on (111) silicon substrate,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 000457–000460.

[29]
S. Herasimenka, K. Ghosh, S. Bowden, and C. Honsberg, “2D modeling of Silicon Heterojunction Interdigitated Back Contact solar cells,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, p. 001390–001394.

[30]
K. Ghosh, C. J. Tracy, S. Herasimenka, C. Honsberg, and S. Bowden, “Explanation of the device operation principle of amorphous silicon/ crystalline silicon heterojunction solar cell and role of the inversion of crystalline silicon surface,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, p. 001383–001386.

[31]
K. Ghosh, C. J. Tracy, B. Dauksher, S. Herasimenka, C. Honsberg, and S. Bowden, “Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, p. 002680–002683.

[32]
N. Faleev and I. Levin, “Strain and crystal defects in thin AlN/GaN structures on (0001) SiC,” Journal of Applied Physics, vol. 107, no. 11, p. 113529–113529–7, Jun. 2010.

[33]
S. N. Dahal, S. P. Bremner, and C. B. Honsberg, “Identification of candidate material systems for quantum dot solar cells  including the effect of strain,” Prog. Photovoltaics, vol. 18, no. 4, pp. 233–239, Jun. 2010.

[34]
S. N. Dahal, Keun-Yong Ban, and C. Honsberg, “Absorption coefficients of quantum dot intermediate band material with negligible valence band offsets,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, p. 001797–001799.

[35]
B. Chhabra, R. L. Opila, and C. B. Honsberg, “12.4% efficient freestanding 30µm ultra-thin silicon solar cell using a-Si/c-Si heterostructure,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, p. 001325–001329.

[36]
B. Chhabra, R. Kamada, R. L. Opila, and C. B. Honsberg, “Effect of small continuous loads on system efficiency,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 002327–002331.

[37]
S. P. Bremner, K. Ghosh, L. Nataraj, S. G. Cloutier, and C. B. Honsberg, “Influence of Sb/As soak times on the structural and optical properties of GaAsSb/GaAs interfaces,” Thin Solid Films, vol. 519, no. 1, p. 64–8, Jun. 2010.

[38]
Keun-Yong Ban, S. P. Bremner, Guangming Liu, S. N. Dahal, P. C. Dippo, A. G. Norman, and C. B. Honsberg, “Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots,” Applied Physics Letters, vol. 96, no. 18, p. 183101 (3 pp.), May 2010.

[39]
K.-Y. Ban, S. N. Dahal, C. B. Honsberg, L. Nataraj, S. P. Bremner, and S. G. Cloutier, “Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well,” Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), vol. 28, no. 3, pp. 3–6, May 2010.

[40]
B. R. Jampana, A. G. Melton, M. Jamil, N. N. Faleev, R. L. Opila, I. T. Ferguson, and C. B. Honsberg, “Design and Realization of Wide-Band-Gap (similar to 2.67 eV) InGaN p-n  Junction Solar Cell,” IEEE Electron Device Lett., vol. 31, no. 1, pp. 32–34, Jan. 2010.

[41]
B. Chhabra, S. Bowden, R. L. Opila, and C. B. Honsberg, “High effective minority carrier lifetime on silicon substrates using quinhydrone-methanol passivation,” Appl. Phys. Lett., vol. 96, no. 6, p. 063502, 2010.

[42]
K.-Y. Ban, D. Kuciauskas, S. P. Bremner, and C. B. Honsberg, “Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 20-25 June 2010, Piscataway, NJ, USA, 2010, p. 003306–9.

[43]
K.-Y. Ban, D. Kuciauskas, S. P. Bremner, S. N. Dahal, N. J. Ekins-Daukes, and C. B. Honsberg, “Controllability of the  occupation of quantum dot electronic states and determination of minimum valence band offset in InAs/GaAsSb,” presented at the 25th EU PVSEC & WCPEC-5, Valencia, Spain, 2010.

[44]
K.-Y. Ban, W.-K. Hong, and C. B. Honsberg, “Photoluminescence study of InAs quantum dots on a δ-doped GaAsSb barrier,” presented at the MRS Spring Meeting, San Francisco, CA, USA, 2010.

[45]
K.-Y. Ban, S. N. Dahal, C. B. Honsberg, L. Nataraj, S. P. Bremner, and S. G. Cloutier, “Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well,” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 28, p. C3I6–C3I9, 2010.

[46]
M. Y. Levy and C. Honsberg, “Absorption coefficients of intermediate-band media,” Journal of Applied Physics, vol. 106, no. 7, p. 073103 (12 pp.), Oct. 2009.

[47]
A. Melton, B. Jampana, R. Opila, C. Honsberg, M. Jamil, and I. Ferguson, “Minimizing shadow losses in III-nitride solar cells,” in Proceedings of SPIE, 2009, vol. 7409, p. 740916–740916–7.

[48]
S. Bowden, “From the Valley of Death to the Golden Decade: Crystalline Silicon Solar Cells from 10 to 100 microns,” in 19th Workshop on Crystalline Silicon Solar Cells and Modules, Vail, Colorado, 2009, pp. 192–195.

[49]
N. Faleev, B. Jampana, O. Jani, H. Yu, R. Opila, I. Ferguson, and C. Honsberg, “Correlation of crystalline defects with photoluminescence of InGaN layers,” Applied Physics Letters, vol. 95, no. 5, p. 051915–051915–3, Aug. 2009.

[50]
Meijun Lu, U. Das, S. Bowden, S. Hegedus, and R. Birkmire, “Optimization of interdigitated back contact silicon heterojunction solar cells by two-dimensional numerical simulation,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, p. 001475–001480.

[51]
Xiaoting Wang, N. Waite, P. Murcia, K. Emery, M. Steiner, F. Kiamilev, K. Goossen, C. Honsberg, and A. Barnett, “Improved outdoor measurements for Very High Efficiency Solar Cell sub-modules,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, pp. 000409–000414.

[52]
Ruiying Hao, C. P. Murcia, T. Creazzo, T. Biegala, A. Lochtefeld, Ji-Soo Park, C. Honsberg, and A. Barnett, “Thin silicon solar cells using epitaxial lateral overgrowth structure,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, p. 000949–000953.

[53]
J. G. Mutitu, Shouyuan Shi, A. Barnett, C. Honsberg, and D. W. Prather, “Light trapping designs for thin silicon solar cells based on photonic crystal and metallic diffractive grating structures,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, p. 000579–000583.

[54]
B. Jampana, A. Melton, M. Jamil, I. Ferguson, R. Opila, and C. Honsberg, “InGaN solar cell design by surface inversion caused by piezoelectric polarization,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, p. 002175–002178.

[55]
S. Bremner, N. Faleev, L. Nataraj, S. Cloutier, S. Dahal, and C. Honsberg, “Passivation of InAs quantum dots for novel photovoltaics,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, pp. 001306–001311.

[56]
K.-Y. Ban, S. N. Dahal, and C. B. Honsberg, “Optical properties of delta doped InAs/GaAs0.88Sb0.12 structure for novel concept solar cells,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, pp. 001264–001267.

[57]
A. Barnett, D. Kirkpatrick, C. Honsberg, D. Moore, M. Wanlass, K. Emery, R. Schwartz, D. Carlson, S. Bowden, D. Aiken, A. Gray, S. Kurtz, L. Kazmerski, M. Steiner, J. Gray, T. Davenport, R. Buelow, L. Takacs, N. Shatz, J. Bortz, O. Jani, K. Goossen, F. Kiamilev, A. Doolittle, I. Ferguson, B. Unger, G. Schmidt, E. Christensen, and D. Salzman, “Very High Efficiency Solar Cell Modules,” Prog. Photovoltaics, vol. 17, no. 1, pp. 75–83, Jan. 2009.

[58]
C. P. Murcia, Ruiying Hao, T. Biegala, C. Honsberg, and A. Barnett, “High performance thin crystalline silicon solar cell grown on silicon-on-insulator,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), 7-12 June 2009, Piscataway, NJ, USA, 2009, p. 4 pp.

[59]
A. Melton, B. Jampana, N. Li, M. Jamil, T. Zaidi, W. Fenwick, R. Opila, C. Honsberg, and I. Ferguson, “High indium composition (20%) InGaN epi-layers on ZnO substrates for very high efficiency solar cells,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), 7-12 June 2009, Piscataway, NJ, USA, 2009, p. 4 pp.

[60]
B. R. Jampana, I. T. Ferguson, R. L. Opila, and C. B. Honsberg, “Utilizing Polarization Induced Band Bending for InGaN Solar Cell Design,” in Materials Research Society Symposium. Compound Semiconductors for Energy Applications and Environmental Sustainability, 14-16 April 2009, Warrendale, PA, USA, 2009, pp. 3–8.

[61]
B. R. Jampana, N. N. Faleev, I. T. Ferguson, R. L. Opila, and C. B. Honsberg, “Crystalline Perfection of Epitaxial Structure: Correlation With Composition, Thickness, and Elastic Strain of Epitaxial Layers,” in Materials Research Society Symposium. Compound Semiconductors for Energy Applications and Environmental Sustainability, 14-16 April 2009, Warrendale, PA, USA, 2009, p. 71–6.

[62]
B. Jampana, A. Melton, N. Faleev, O. Jani, M. Jamil, I. Ferguson, R. Opila, and C. B. Honsberg, “Correlation between crystalline perfection of InGaN epi-layers and wide-band gap InGaN solar cell performance,” in Proceedings of the 34th IEEE Photovoltaic Specialists Conference, Philadelphia, PA, USA, 2009.

[63]
B. Chhabra, C. B. Honsberg, and R. L. Opila, “High open circuit voltages on  50 micron silicon substrates by amorphous-silicon (a-Si) and quinhydrone-methanol (QHY-ME) passivation,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), 7-12 June 2009, Piscataway, NJ, USA, 2009.

[64]
K.-Y. Ban, S. N. Dahal, S. P. Bremner, and C. B. Honsberg, “Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well,” presented at the NAMBE Conference, Princeton, NJ, USA, 2009.
 
Updated on 3.22.12