Publications

Publications from members of the Solar Power Labs since 2009

[1]
K.-Y. Ban, S. N. Dahal, S. P. Bremner, and C. B. Honsberg, “Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well,” presented at the NAMBE Conference, Princeton, NJ, USA, 2009.
[2]
B. Chhabra, C. B. Honsberg, and R. L. Opila, “High open circuit voltages on  50 micron silicon substrates by amorphous-silicon (a-Si) and quinhydrone-methanol (QHY-ME) passivation,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), 7-12 June 2009, Piscataway, NJ, USA, 2009, p. 4 pp.
[3]
B. Jampana, A. Melton, N. Faleev, O. Jani, M. Jamil, I. Ferguson, R. Opila, and C. B. Honsberg, “Correlation between crystalline perfection of InGaN epi-layers and wide-band gap InGaN solar cell performance,” in Proceedings of the 34th IEEE Photovoltaic Specialists Conference, Philadelphia, PA, USA, 2009.
[4]
B. R. Jampana, N. N. Faleev, I. T. Ferguson, R. L. Opila, and C. B. Honsberg, “Crystalline Perfection of Epitaxial Structure: Correlation With Composition, Thickness, and Elastic Strain of Epitaxial Layers,” in Materials Research Society Symposium. Compound Semiconductors for Energy Applications and Environmental Sustainability, 14-16 April 2009, Warrendale, PA, USA, 2009, pp. 71–6.
[5]
B. R. Jampana, I. T. Ferguson, R. L. Opila, and C. B. Honsberg, “Utilizing Polarization Induced Band Bending for InGaN Solar Cell Design,” in Materials Research Society Symposium. Compound Semiconductors for Energy Applications and Environmental Sustainability, 14-16 April 2009, Warrendale, PA, USA, 2009, pp. 3–8.
[6]
A. Melton, B. Jampana, N. Li, M. Jamil, T. Zaidi, W. Fenwick, R. Opila, C. Honsberg, and I. Ferguson, “High indium composition (20%) InGaN epi-layers on ZnO substrates for very high efficiency solar cells,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), 7-12 June 2009, Piscataway, NJ, USA, 2009, p. 4 pp.
[7]
C. P. Murcia, Ruiying Hao, T. Biegala, C. Honsberg, and A. Barnett, “High performance thin crystalline silicon solar cell grown on silicon-on-insulator,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), 7-12 June 2009, Piscataway, NJ, USA, 2009, p. 4 pp.
[8]
A. Barnett, D. Kirkpatrick, C. Honsberg, D. Moore, M. Wanlass, K. Emery, R. Schwartz, D. Carlson, S. Bowden, D. Aiken, A. Gray, S. Kurtz, L. Kazmerski, M. Steiner, J. Gray, T. Davenport, R. Buelow, L. Takacs, N. Shatz, J. Bortz, O. Jani, K. Goossen, F. Kiamilev, A. Doolittle, I. Ferguson, B. Unger, G. Schmidt, E. Christensen, and D. Salzman, “Very High Efficiency Solar Cell Modules,” Prog. Photovoltaics, vol. 17, no. 1, pp. 75–83, Jan. 2009.
[9]
K.-Y. Ban, S. N. Dahal, and C. B. Honsberg, “Optical properties of delta doped InAs/GaAs0.88Sb0.12 structure for novel concept solar cells,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, pp. 001264–001267.
[10]
S. Bremner, N. Faleev, L. Nataraj, S. Cloutier, S. Dahal, and C. Honsberg, “Passivation of InAs quantum dots for novel photovoltaics,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, pp. 001306–001311.
[11]
B. Jampana, A. Melton, M. Jamil, I. Ferguson, R. Opila, and C. Honsberg, “InGaN solar cell design by surface inversion caused by piezoelectric polarization,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, pp. 002175–002178.
[12]
J. G. Mutitu, Shouyuan Shi, A. Barnett, C. Honsberg, and D. W. Prather, “Light trapping designs for thin silicon solar cells based on photonic crystal and metallic diffractive grating structures,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, pp. 000579–000583.
[13]
Ruiying Hao, C. P. Murcia, T. Creazzo, T. Biegala, A. Lochtefeld, Ji-Soo Park, C. Honsberg, and A. Barnett, “Thin silicon solar cells using epitaxial lateral overgrowth structure,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, pp. 000949–000953.
[14]
Xiaoting Wang, N. Waite, P. Murcia, K. Emery, M. Steiner, F. Kiamilev, K. Goossen, C. Honsberg, and A. Barnett, “Improved outdoor measurements for Very High Efficiency Solar Cell sub-modules,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, pp. 000409–000414.
[15]
Meijun Lu, U. Das, S. Bowden, S. Hegedus, and R. Birkmire, “Optimization of interdigitated back contact silicon heterojunction solar cells by two-dimensional numerical simulation,” in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, pp. 001475–001480.
[16]
N. Faleev, B. Jampana, O. Jani, H. Yu, R. Opila, I. Ferguson, and C. Honsberg, “Correlation of crystalline defects with photoluminescence of InGaN layers,” Applied Physics Letters, vol. 95, no. 5, pp. 051915–051915–3, Aug. 2009.
[17]
S. Bowden, “From the Valley of Death to the Golden Decade: Crystalline Silicon Solar Cells from 10 to 100 microns,” in 19th Workshop on Crystalline Silicon Solar Cells and Modules, Vail, Colorado, 2009, pp. 192–195.
[18]
A. Melton, B. Jampana, R. Opila, C. Honsberg, M. Jamil, and I. Ferguson, “Minimizing shadow losses in III-nitride solar cells,” in Proceedings of SPIE, 2009, vol. 7409, pp. 740916–740916–7.
[19]
M. Y. Levy and C. Honsberg, “Absorption coefficients of intermediate-band media,” Journal of Applied Physics, vol. 106, no. 7, p. 073103 (12 pp.), Oct. 2009.
[20]
K.-Y. Ban, S. N. Dahal, C. B. Honsberg, L. Nataraj, S. P. Bremner, and S. G. Cloutier, “Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well,” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 28, pp. C3I6–C3I9, 2010.
[21]
K.-Y. Ban, W.-K. Hong, and C. B. Honsberg, “Photoluminescence study of InAs quantum dots on a δ-doped GaAsSb barrier,” presented at the MRS Spring Meeting, San Francisco, CA, USA, 2010.
[22]
K.-Y. Ban, D. Kuciauskas, S. P. Bremner, S. N. Dahal, N. J. Ekins-Daukes, and C. B. Honsberg, “Controllability of the  occupation of quantum dot electronic states and determination of minimum valence band offset in InAs/GaAsSb,” presented at the 25th EU PVSEC & WCPEC-5, Valencia, Spain, 2010.
[23]
K.-Y. Ban, D. Kuciauskas, S. P. Bremner, and C. B. Honsberg, “Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 20-25 June 2010, Piscataway, NJ, USA, 2010, pp. 003306–9.
[24]
S. Bowden, C. Honsberg, and D. Schroder, “Moore’s Law of Photovoltaics,” Future Photovoltaics, no. 1, 2010.
[25]
B. Chhabra, S. Bowden, R. L. Opila, and C. B. Honsberg, “High effective minority carrier lifetime on silicon substrates using quinhydrone-methanol passivation,” Appl. Phys. Lett., vol. 96, no. 6, p. 063502, 2010.
[26]
B. R. Jampana, A. G. Melton, M. Jamil, N. N. Faleev, R. L. Opila, I. T. Ferguson, and C. B. Honsberg, “Design and Realization of Wide-Band-Gap (similar to 2.67 eV) InGaN p-n  Junction Solar Cell,” IEEE Electron Device Lett., vol. 31, no. 1, pp. 32–34, Jan. 2010.
[27]
K.-Y. Ban, S. N. Dahal, C. B. Honsberg, L. Nataraj, S. P. Bremner, and S. G. Cloutier, “Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well,” Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), vol. 28, no. 3, pp. 3–6, May 2010.
[28]
Keun-Yong Ban, S. P. Bremner, Guangming Liu, S. N. Dahal, P. C. Dippo, A. G. Norman, and C. B. Honsberg, “Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots,” Applied Physics Letters, vol. 96, no. 18, p. 183101 (3 pp.), May 2010.
[29]
S. P. Bremner, K. Ghosh, L. Nataraj, S. G. Cloutier, and C. B. Honsberg, “Influence of Sb/As soak times on the structural and optical properties of GaAsSb/GaAs interfaces,” Thin Solid Films, vol. 519, no. 1, pp. 64–8, Jun. 2010.
[30]
B. Chhabra, R. Kamada, R. L. Opila, and C. B. Honsberg, “Effect of small continuous loads on system efficiency,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 002327–002331.
[31]
B. Chhabra, R. L. Opila, and C. B. Honsberg, “12.4% efficient freestanding 30µm ultra-thin silicon solar cell using a-Si/c-Si heterostructure,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 001325–001329.
[32]
S. N. Dahal, Keun-Yong Ban, and C. Honsberg, “Absorption coefficients of quantum dot intermediate band material with negligible valence band offsets,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 001797–001799.
[33]
S. N. Dahal, S. P. Bremner, and C. B. Honsberg, “Identification of candidate material systems for quantum dot solar cells  including the effect of strain,” Prog. Photovoltaics, vol. 18, no. 4, pp. 233–239, Jun. 2010.
[34]
N. Faleev and I. Levin, “Strain and crystal defects in thin AlN/GaN structures on (0001) SiC,” Journal of Applied Physics, vol. 107, no. 11, pp. 113529–113529–7, Jun. 2010.
[35]
K. Ghosh, C. J. Tracy, B. Dauksher, S. Herasimenka, C. Honsberg, and S. Bowden, “Determination of charged state density at the interface between amorphous silicon and crystalline silicon by lateral conductance,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 002680–002683.
[36]
K. Ghosh, C. J. Tracy, S. Herasimenka, C. Honsberg, and S. Bowden, “Explanation of the device operation principle of amorphous silicon/ crystalline silicon heterojunction solar cell and role of the inversion of crystalline silicon surface,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 001383–001386.
[37]
S. Herasimenka, K. Ghosh, S. Bowden, and C. Honsberg, “2D modeling of Silicon Heterojunction Interdigitated Back Contact solar cells,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 001390–001394.
[38]
B. Jampana, Tianming Xu, A. Melton, M. Jamil, R. Opila, C. Honsberg, and I. Ferguson, “Realization of InGaN solar cells on (111) silicon substrate,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 000457–000460.
[39]
Jongwon Lee and C. Honsberg, “Detailed balance calculations of multiple exciton generation and Tandem Hybrid solar cells,” in 2010 35th IEEE Photovoltaic Specialists Conference (PVSC), 2010, pp. 002932–002937.
[40]
A. Pancholi, S. P. Bremner, J. Boyle, V. G. Stoleru, and C. B. Honsberg, “Variability of heterostructure type with thickness of barriers and  temperature in the InAs/GaAsSb quantum dot system RID G-1695-2011,” Sol. Energy Mater. Sol. Cells, vol. 94, no. 6, pp. 1025–1030, Jun. 2010.
[41]
V. I. Punegov and N. N. Faleev, “Coherent and diffuse X-ray scattering from a multicomponent superlattice with quantum dots,” JETP Letters, vol. 92, no. 7, pp. 437–443, Dec. 2010.
[42]
A. J. Bailey and C. B. Honsberg, “Thermal-Quantum Solar Cells,” presented at the The 37th IEEE Photovoltaics Specialists Conference, Seattle, WA, 2011, 2011.
[43]
K.-Y. Ban, S. P. Bremner, S. N. Dahal, and C. B. Honsberg, “Investigation of Intersubband Transitions of InAs/GaAsSb Quantum Dots,” presented at the NAMBE Conference, San Diego, CA, 2011.
[44]
K.-Y. Ban, S. P. Bremner, D. Kuciauskas, S. N. Dahal, and C. B. Honsberg, “Detection of the third transition of InAs/GaAsSb quantum dots,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.
[45]
Katherine G. Nelson, Jenefer Husman, Sarah K. Brem, Christiana Honsberg, and Stuart Bowden, “Optimizing Educational Approaches for University Photovoltaics Education,” in Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.
[46]
B. Chhabra, C. Weiland, R. L. Opila, and C. B. Honsberg, “Surface characterization of quinhydrone-methanol and iodine-methanol passivated silicon substrates using X-ray photoelectron spectroscopy,” Physica Status Solidi A, vol. 208, no. 1, pp. 91–5, Jan. 2011.
[47]
Keun-Yong Ban, Woong-Ki Hong, S. P. Bremner, S. N. Dahal, H. McFelea, and C. B. Honsberg, “Controllability of the subband occupation of InAs quantum dots on a delta-doped GaAsSb barrier,” Journal of Applied Physics, vol. 109, no. 1, p. 014312 (6 pp.), Jan. 2011.
[48]
S. N. Dahal and C. B. Honsberg, “Effect of Elastic Strain on Band Edge Alignment and Position of Intermediate Band of Isolated and Coupled Quantum Dots,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.
[49]
N. Faleev, S. P. Bremner, K.-Y. Ban, D. Smith, and C. B. Honsberg, “Investigation of the Correlations of Structural and Physical Features of Inas Quantum Dots, Embedded Between Strain-Relief Gaassb Layers with Different Sb Compositions,” in Conference Record of the 37th IEEE Photovoltaic Specialists Conference, 2011.
[50]
K. Ghosh and C. B. Honsberg, “Absorption coefficient for multiple-quasi fermi level system in quantum well,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.
[51]
K. Ghosh, N.-K. Song, M.-S. Oh, D.-S. Kim, and S. Bowden, “Extraction of recombination parameters of a-Si/c-Si solar cell from lifetime spectroscopy,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.
[52]
S. M. Goodnick and C. B. Honsberg, “Ultrafast Carrier Relaxation and Nonequilibrium Phonons in Hot Carrier Solar Cells,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.
[53]
C. B. Honsberg, S. P. Bremner, J. Lee, A. J. Bailey, and S. N. Dahal, “Hyrbid Advanced Concept Solar Cells,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.
[54]
J. Lee and C. B. Honsberg, “Limiting Efficiencies of Intermediate Band Solar Cell Assisted with Multiple Exciton Generation,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.
[55]
J. Lee and C. B. Honsberg, “Thermodynamic Limits of Hybrid Photovoltaic Systems Using Multiple Junction Solar Cells with Carrier Transitions at Intermediate Band,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.
[56]
V. Sharma, A. J. Bailey, B. Dauksher, C. J. Tracy, S. Bowden, and B. O’Brien, “Characterization and comparison of silicon nitride films deposited using two novel processes,” presented at the Conference Record of the 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, USA, 2011.
[57]
N. Chandra, V. Sharma, G. Y. Chung, and D. K. Schroder, “Four-point probe characterization of 4H silicon carbide,” Solid-State Electronics, vol. 64, no. 1, pp. 73–77, Oct. 2011.
[58]
K. G. Nelson, C. Foster, M. Crowder, J. Husman, and T. Ganesh, “The Solar Energy Challenge: Engineering Notebook,” in Arizona Science Teachers Association, Mesa, AZ, 2011.
[59]
K.-Y. Ban, D. Kuciauskas, S. P. Bremner, and C. B. Honsberg, “Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence,” Journal of Applied Physics, vol. 111, no. 10, pp. 104302–104302–4, 2012.
[60]
S. Bowden and J. LeBeau, “Laser wafering,” in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 001826–001829.
[61]
S. P. Bremner and C. B. Honsberg, “Intermediate band solar cell with non-ideal band structure under AM1.5 spectrum,” in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 000021–000024.
[62]
S. Herasimenka, P. Altermatt, S. Bowden, and C. Honsberg, “Reassessment of classic recombination mechanisms in silicon point contact concentrator solar cell,” in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 001055–001058.
[63]
J. Lee, S. N. Dahal, and C. B. Honsberg, “Theoretical analysis for intermediate band and tandem hybrid solar cell materials,” in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 000068–000072.
[64]
J. Lee and C. B. Honsberg, “Limiting efficiencies over 50% using multijunction solar cells with multiple exciton generation,” in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 000062–000067.
[65]
V. Sharma and S. Bowden, “Peak load offset and the effect of dust storms on 10 MWp distributed grid tied photovoltaic systems installed at Arizona State University,” in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 000590–000595.
[66]
X. Wang, N. Waite, P. Murcia, K. Emery, M. Steiner, F. Kiamilev, K. Goossen, C. Honsberg, and A. Barnett, “Lateral spectrum splitting concentrator photovoltaics: Direct measurement of component and submodule efficiency,” Progress in Photovoltaics: Research and Applications, vol. 20, no. 2, pp. 149–165, 2012.
[67]
K.-Y. Ban, S. P. Bremner, D. Kuciauskas, S. N. Dahal, and C. B. Honsberg, “The role of Sb compositions on the properties of InAs/GaAsSb quantum dots (QDs),” Proceedings of SPIE, vol. 8256, no. 1, p. 82561C–82561C–6, Feb. 2012.
[68]
S. M. Goodnick and C. B. Honsberg, “Modeling carrier relaxation in hot carrier solar cells,” Proceedings of SPIE, vol. 8256, no. 1, p. 82560W–82560W–10, Feb. 2012.
[69]
J. Lee and C. B. Honsberg, “The thermodynamic limits of tandem photovoltaic devices with intermediate band,” Proceedings of SPIE, vol. 8256, no. 1, p. 82560Q–82560Q–12, Feb. 2012.
[70]
J. Husman, “Arizona Best Fest,” Downtown Phoenix, 11-Feb-2012.
[71]
V. Sharma, A. Bailey, B. Dauksher, C. Tracy, S. Bowden, and B. O’Brien, “Characterization and comparison of silicon nitride films deposited using two novel processes,” J. Vac. Sci. Technol. A, vol. 30, no. 2, pp. 021201–1, Feb. 2012.
[72]
K. . LaRosa, “Photoluminescence Imaging of Silicon Wafers Using High Power Light Emitting Diode Arrays,” Arizona State University, 2012.
[73]
J. Husman, “Night of the Open Door,” Qesst offices, asu, 03-Mar-2012.
[74]
S. Limpert, “Solar Energy Technologies - A Comparative Study of Commercial Applications and Government Policies,” Arizona State University, 2012.
[75]
Arizona State University, “ASU|UA Student Conference on Renewable Energy Science,” Arizona State University, 19-Apr-2012.
[76]
S. Bowden and J. LeBeau, “Laser wafering,” in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 001826 –001829.
[77]
S. Bowden and J. LeBeau, “Laser wafering,” presented at the 2012 38th IEEE Photovoltaic Specialists Conference, 2012, pp. 001826–001829.
[78]
S. Bremner, K. Ghosh, N. Ekins-Daukes, C. Honsberg, and S. Goodnick, “Issues in the physical measurement of the intermediate band effect,” presented at the 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 000641–000646.
[79]
S. P. Bremner and C. B. Honsberg, “Intermediate band solar cell with non-ideal band structure under AM1.5 spectrum,” in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 000021 –000024.
[80]
S. P. Bremner and C. B. Honsberg, “Intermediate band solar cell with non-ideal band structure under AM1.5 spectrum,” presented at the 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 000021–000024.
[81]
K. Ghosh, C. Tracy, and S. Bowden, “Experimental and theoretical verification of the presence of inversion region in a-Si/c-Si heterojunction solar cells with an intrinsic layer,” presented at the 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 001046–001048.
[82]
K. Ghosh, C. Tracy, S. Goodnick, and S. Bowden, “Effect of band bending and band offset in the transport of minority carriers across the ordered/disordered interface of a-Si/c-Si heterojunction solar cell,” presented at the 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 000221–000226.
[83]
S. M. Goodnick, S. Limpert, C. Honsberg, and P. Lugli, “Simulation of carrier relaxation in hot carrier solar cells,” in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 001657 –001662.
[84]
S. M. Goodnick, S. Limpert, C. Honsberg, and P. Lugli, “Simulation of carrier relaxation in hot carrier solar cells,” presented at the 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 001657–001662.
[85]
S. Herasimenka, P. Altermatt, S. Bowden, and C. Honsberg, “Reassessment of classic recombination mechanisms in silicon point contact concentrator solar cell,” presented at the 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 001055–001058.
[86]
C. Honsberg and S. Goodnick, “Realizing Terawatt-Scale Solar Electricity: Nanotechnology-Enabled Physical Mechanisms and Material Properties,” IEEE Nanotechnology Magazine, vol. 6, no. 2, pp. 6–14, Jun. 2012.
[87]
J. M. Kuitche, V. Sharma, J. Oh, R. Pan, and G. TamizhMani, “Statistical analysis of commercial c-Si PV module photovoltaic efficiency distribution over 10-years period,” 2012, pp. 002421–002425.
[88]
J. Lee, S. N. Dahal, and C. B. Honsberg, “Theoretical analysis for intermediate band and tandem hybrid solar cell materials,” in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 000068 –000072.
[89]
J. Lee, S. N. Dahal, and C. B. Honsberg, “Theoretical analysis for intermediate band and tandem hybrid solar cell materials,” presented at the 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 000068–000072.
[90]
J. Lee and C. B. Honsberg, “Limiting efficiencies over 50% using multijunction solar cells with multiple exciton generation,” in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, pp. 000062 –000067.
[91]
J. Lee and C. B. Honsberg, “Limiting efficiencies over 50% using multijunction solar cells with multiple exciton generation,” 2012, pp. 000062–000067.
[92]
S. Limpert and H. Battelle, “An overview of the Bangladeshi photovoltaic market, government policies and deployment challenges,” presented at the 2012 38th IEEE Photovoltaic Specialists Conference, 2012, pp. 002455–002457.
[93]
K. G. Nelson, R. Koselar, and J. Husman, “Work in Progress: Towards the development of a model for beneficial use of educational technology through a photovoltaics engineering website.,” presented at the American Society for Engineering Education Annual Conference, San Antonio, TX, 2012.
[94]
V. Sharma and S. Bowden, “Peak load offset and the effect of dust storms on 10 MWp distributed grid tied photovoltaic systems installed at Arizona State University,” presented at the 38th IEEE Photovoltaic Specialists Conference, 2012, pp. 000590–000595.
[95]
T. Reblitz, S. Bowden, and S. Herasimenka, “Web applications for: centralization of photovoltaic cell production and characterization data, and processing of Sentaurus simulation files,” in proceedings of 22nd Workshop on Crystalline Silicon Solar Cells & Modules, Vail Colorado,, 2012.
[96]
B. R. Jampana, C. R. Weiland, R. L. Opila, I. T. Ferguson, and C. B. Honsberg, “Optical absorption dependence on composition and thickness of InxGa1−xN (0.05<×<0.22) grown on GaN/sapphire,” Thin Solid Films, vol. 520, no. 22, pp. 6807–6812, Sep. 2012.
[97]
B. R. Jampana, C. R. Weiland, R. L. Opila, I. T. Ferguson, and C. B. Honsberg, “Optical absorption dependence on composition and thickness of InxGa1 − xN (0.05 < × < 0.22) grown on GaN/sapphire,” Thin Solid Films, vol. 520, no. 22, pp. 6807–6812, Sep. 2012.
[98]
R. Koseler, S. Shapcott, K. G. Nelson, and J. Husman, “Work in progress: Evaluation of an online education portal from the user’s perspective: An empirical investigation of a photovoltaics (PV) engineering learning portal, pveducation.org,” presented at the FIE 2012, 2012, pp. 1–2.
[99]
K. G. Nelson, S. K. Brem, and J. Husman, “Work in progress: Identification of misconceptions governed by emergent phenomena in photovoltaics content using the Delphi Method,” presented at the FIE 2012, 2012, pp. 1–2.
[100]
S. Bowden, “Correlation between lifetime curve and performance of amorphous silicon/ crystalline silicon heterostructure solar cell,” 2013.
[101]
S. Bowden, K. Ghosh, and C. Honsberg, “Non PN junction solar cells using carrier selective contacts,” 2013, vol. 8620, p. 86200T–86200T–6.
[102]
S. P. Bremner, K.-Y. Ban, N. N. Faleev, C. B. Honsberg, and D. J. Smith, “Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001),” Journal of Applied Physics, vol. 114, no. 10, pp. 103511–103511–9, 2013.
[103]
K. Ghosh, S. Bowden, and C. Tracy, “Role of hot carriers in the interfacial transport in amorphous silicon/crystalline silicon heterostructure solar cells,” physica status solidi (a), vol. 210, no. 2, pp. 413–419, 2013.
[104]
D. Lubyshev, J. M. Fastenau, Y. Qiu, A. W. K. Liu, E. J. Koerperick, J. T. Olesberg, D. Norton, N. N. Faleev, and C. B. Honsberg, “MBE growth of Sb-based nBn photodetectors on large diameter GaAs substrates,” 2013, vol. 8704, pp. 870412–870412–10.
[105]
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