Surface recombination is a critical parameter that determines the perfromance of thin silicon solar cells. We have developed a passivation process with very low recomination giving very high minority lifetimes in crystalline silicon exceeding 60 ms.

 The paper is publlished online at Applied Physics Letters: ]S. Y. Herasimenka, C. J. Tracy, V. Sharma, N. Vulic, W. J. Dauksher, and S. G. Bowden, “Surface passivation of n-type c-Si wafers by a-Si/SiO2/SiNx stack with <1 cm/s effective surface recombination velocity,” Applied Physics Letters, vol. 103, no. 18, p. 183903, Oct. 2013..