Molecular Beam Epitaxy

Molecular beam epitaxy or MBE is an ultra-high vacuum crystal growth technique, offering the ability to control material composition down to the atomic layer level. The MBE at the Solar Power Laboratory is a state of the art Gen III Veeco system. The system is fitted with gallium, indium, aluminum, phosphorus, antimony, arsenic and nitrogen sources, thereby allowing the growth of a large number of III-V material combinations.